N-channel Silicon Metal-oxide Semiconductor FET designed for power applications. Features a 600V drain-to-source voltage and 40A continuous drain current. Offers a low 0.07ohm drain-to-source resistance and 290W maximum power dissipation. Packaged in a SOT-227-4 case for chassis mounting, this RoHS compliant component boasts fast switching speeds with a 20ns turn-on delay and 10ns fall time.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power290W
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Technical Specifications
Microsemi APT40N60JCU3 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.6mm |
| Input Capacitance | 7.015nF |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290W |
| Mount | Chassis Mount, Screw |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 290W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 115ns |
| Turn-On Delay Time | 20ns |
| Weight | 1.058219oz |
| Width | 25.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT40N60JCU3 Datasheet
Download the complete datasheet for Microsemi APT40N60JCU3 to view detailed technical specifications.
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