The APT45GP120B2DQ2G is a 1200V insulated gate bipolar transistor with a maximum collector current of 113A and a maximum power dissipation of 625W. It is packaged in a through hole package and is compliant with RoHS regulations. The operating temperature range is from -55°C to 150°C. This device is designed for high-power applications and is manufactured by Microsemi.
Current Rating113A
MountingThrough Hole
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Technical Specifications
Microsemi APT45GP120B2DQ2G technical specifications.
General
| Collector Emitter Saturation Voltage | 3.3V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 1.2kV |
| Continuous Collector Current | 113A |
| Current Rating | 113A |
| Height | 5.31mm |
| Lead Free | Lead Free |
| Length | 21.46mm |
| Max Collector Current | 113A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 1.2kV |
| Width | 16.26mm |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT45GP120B2DQ2G Datasheet
Download the complete datasheet for Microsemi APT45GP120B2DQ2G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.