N-Channel Power MOSFET, 600V Drain-Source Voltage, 47A Continuous Drain Current, and 70mΩ Max Drain-Source On-Resistance. Features 18ns Turn-On Delay, 8ns Fall Time, and 110ns Turn-Off Delay. This silicon Metal-Oxide Semiconductor FET offers 417W Max Power Dissipation and operates within a -55°C to 150°C temperature range. Packaged in a TO-247-3 through-hole mount, it is RoHS compliant and lead-free.
PackageTO-247-3
Current Rating47A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Microsemi APT47N60BC3G technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 47A |
| Current Rating | 47A |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 70mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.31mm |
| Input Capacitance | 7.015nF |
| Lead Free | Lead Free |
| Length | 21.46mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 417W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 417W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | 600V |
| Weight | 1.340411oz |
| Width | 16.26mm |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT47N60BC3G Datasheet
Download the complete datasheet for Microsemi APT47N60BC3G to view detailed technical specifications.
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