N-Channel Power MOSFET featuring 500V drain-source voltage and 88A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 38mΩ drain-to-source resistance and 694W maximum power dissipation. Designed for chassis mounting with a screw terminal, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 17ns turn-on delay and 4ns fall time.
Microsemi APT50M38JLL technical specifications.
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 88A |
| Current Rating | 88A |
| Drain to Source Resistance | 38mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 12nF |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 694W |
| Mount | Chassis Mount, Screw |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 694W |
| Radiation Hardening | No |
| Rds On Max | 38mR |
| RoHS Compliant | Yes |
| Series | POWER MOS 7® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 500V |
| Weight | 1.058219oz |
| Width | 25.4mm |
| RoHS | Compliant |
Download the complete datasheet for Microsemi APT50M38JLL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.