N-Channel Power MOSFET, 500V Vdss, 51A Continuous Drain Current (ID), and 75mR Drain-to-Source On-Resistance. This silicon Metal-Oxide-Semiconductor FET features a low 75mR Rds On Max, 5.59nF input capacitance, and fast switching times with a 10ns turn-on delay and 5ns fall time. Designed for high power applications with a 290W max power dissipation, it is housed in a SOT-227-4 package for chassis mounting. RoHS compliant and operating from -55°C to 150°C.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power290W
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Technical Specifications
Microsemi APT50M75JLLU2 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 51A |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 75mR |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 5.59nF |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290W |
| Mount | Chassis Mount, Screw |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 290W |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Series | POWER MOS 7® |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 10ns |
| Weight | 1.058219oz |
| Width | 25.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT50M75JLLU2 Datasheet
Download the complete datasheet for Microsemi APT50M75JLLU2 to view detailed technical specifications.
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