Microsemi
APT56F60B2
Power Field-Effect Transistor, 56A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, ROHS COMPLIANT, TO-247, T-MAX, 3 PIN
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Microsemi APT56F60B2 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
60A
Drain to Source Voltage (Vdss)
600V
Fall Time
60ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
11.3nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.04kW
Mount
Through Hole
Packaging
Rail/Tube
Radiation Hardening
No
Rds On Max
110mR
RoHS Compliant
Yes
Series
POWER MOS 8™
Turn-Off Delay Time
190ns
Turn-On Delay Time
65ns
Compliance
RoHS
Compliant
Datasheet
Microsemi APT56F60B2 Datasheet
Download the complete datasheet for Microsemi APT56F60B2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.