Microsemi
APT5F100K
Power Field-Effect Transistor, 32A I(D), 1000V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, 3 PIN
PackageTO-220-3
Current Rating5A
MountingThrough Hole
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Technical Specifications
Microsemi APT5F100K technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5A
Current Rating
5A
Drain to Source Voltage (Vdss)
1kV
Fall Time
21ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.409nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
225W
Mount
Through Hole
Packaging
Rail/Tube
Radiation Hardening
No
Rds On Max
2.8R
RoHS Compliant
Yes
Series
POWER MOS 8™
Turn-Off Delay Time
72ns
Turn-On Delay Time
23ns
DC Rated Voltage
1kV
Compliance
RoHS
Compliant
Datasheet
Microsemi APT5F100K Datasheet
Download the complete datasheet for Microsemi APT5F100K to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.