Microsemi
APT60M80L2VRG
Power Field-Effect Transistor, 65A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN
PackageTO-264-3
Current Rating65A
MountingThrough Hole
Power833W
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Technical Specifications
Microsemi APT60M80L2VRG technical specifications.
General
Package/Case
TO-264-3
Continuous Drain Current (ID)
65A
Current Rating
65A
Drain to Source Voltage (Vdss)
600V
Fall Time
31ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
13.3nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
833W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
833W
Radiation Hardening
No
Rds On Max
80mR
RoHS Compliant
Yes
Series
POWER MOS V®
Turn-Off Delay Time
70ns
Turn-On Delay Time
14ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Microsemi APT60M80L2VRG Datasheet
Download the complete datasheet for Microsemi APT60M80L2VRG to view detailed technical specifications.
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