N-Channel Power MOSFET featuring 600V drain-source voltage and 60A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.045ohm drain-source resistance and a maximum power dissipation of 431W. Designed for through-hole mounting in a TO-247-3 package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching parameters include a 30ns turn-on delay and 10ns fall time.
PackageTO-247-3
Current Rating60A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Microsemi APT60N60BCSG technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 60A |
| Current Rating | 60A |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 5.31mm |
| Lead Free | Lead Free |
| Length | 21.46mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 431W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 431W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 600V |
| Weight | 1.340411oz |
| Width | 16.26mm |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT60N60BCSG Datasheet
Download the complete datasheet for Microsemi APT60N60BCSG to view detailed technical specifications.
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