N-Channel Power MOSFET featuring 600V drain-source voltage and 77A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 35mΩ drain-source resistance and 568W maximum power dissipation. Designed for chassis mounting with screw terminals, it operates from -55°C to 150°C and includes fast switching characteristics with an 8ns fall time and 18ns turn-on delay.
PackageSOT-227-4
Current Rating77A
MountingChassis Mount, Screw
PolarityN-CHANNEL
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Technical Specifications
Microsemi APT77N60JC3 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 77A |
| Current Rating | 77A |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.6mm |
| Input Capacitance | 13.6nF |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 568W |
| Mount | Chassis Mount, Screw |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 14 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 568W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | 600V |
| Weight | 1.058219oz |
| Width | 25.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT77N60JC3 Datasheet
Download the complete datasheet for Microsemi APT77N60JC3 to view detailed technical specifications.
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