Microsemi
APTC90AM60T1G
Power Field-Effect Transistor, 59A I(D), 900V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP1, 12 PIN
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Microsemi APTC90AM60T1G technical specifications.
General
Package/Case
Module
Continuous Drain Current (ID)
59A
Drain to Source Voltage (Vdss)
900V
Fall Time
25ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
13.6nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
462W
Mount
Chassis Mount, Screw
Package Quantity
1
Packaging
Tray
Radiation Hardening
No
Rds On Max
60mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
400ns
Turn-On Delay Time
70ns
Compliance
RoHS
Compliant
Datasheet
Microsemi APTC90AM60T1G Datasheet
Download the complete datasheet for Microsemi APTC90AM60T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.