Microsemi
APTGF15H120T3G
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, MODULE-25
PackageModule
MountingChassis Mount
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Technical Specifications
Microsemi APTGF15H120T3G technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 3.7V |
| Input | Standard |
| Input Capacitance | 1nF |
| Max Collector Current | 25A |
| Max Power Dissipation | 140W |
| Mount | Chassis Mount |
| NTC Thermistor | Yes |
| Packaging | Bulk |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTGF15H120T3G Datasheet
Download the complete datasheet for Microsemi APTGF15H120T3G to view detailed technical specifications.
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