Microsemi
APTGF300U120DG
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, MODULE-5
PackageModule
MountingChassis Mount, Screw
Quick Jump:
Technical Specifications
Microsemi APTGF300U120DG technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.9V |
| Input | Standard |
| Input Capacitance | 21nF |
| Lead Free | Lead Free |
| Max Collector Current | 400A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.78kW |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTGF300U120DG Datasheet
Download the complete datasheet for Microsemi APTGF300U120DG to view detailed technical specifications.
No datasheet is available for this part.