Microsemi
APTGF75DA60D1G
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-7
PackageD
MountingChassis Mount
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Technical Specifications
Microsemi APTGF75DA60D1G technical specifications.
General
Package/Case
D
Collector Emitter Breakdown Voltage
600V
Collector-emitter Voltage-Max
2.45V
Input
Standard
Input Capacitance
3.3nF
Max Collector Current
100A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
355W
Mount
Chassis Mount
NTC Thermistor
No
Packaging
Bulk
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Microsemi APTGF75DA60D1G Datasheet
Download the complete datasheet for Microsemi APTGF75DA60D1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.