N-Channel Power MOSFET, 1000V Vdss, 215A Continuous Drain Current. Features 52mR maximum drain-source on-resistance and 5kW maximum power dissipation. Operates from -40°C to 150°C with a 30V gate-source voltage. Includes 18ns turn-on delay and 55ns fall time. Packaged in a SP6 module for chassis mounting. RoHS compliant.
PackageModule
MountingChassis Mount, Screw
PolarityN-CHANNEL
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Technical Specifications
Microsemi APTM100UM45FAG technical specifications.
General
| Package/Case | Module |
| Continuous Drain Current (ID) | 215A |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 52mR |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15mm |
| Input Capacitance | 42.7nF |
| Lead Free | Lead Free |
| Length | 108mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 5kW |
| Mount | Chassis Mount, Screw |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 52mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 18ns |
| Width | 62mm |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTM100UM45FAG Datasheet
Download the complete datasheet for Microsemi APTM100UM45FAG to view detailed technical specifications.
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