Microsemi
APTM120DSK57T3G
Power Field-Effect Transistor, 17A I(D), 1200V, 0.648ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP3, 25 PIN
MountingChassis Mount, Screw
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Technical Specifications
Microsemi APTM120DSK57T3G technical specifications.
General
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 45ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.155nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 390W |
| Mount | Chassis Mount, Screw |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 684mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 160ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTM120DSK57T3G Datasheet
Download the complete datasheet for Microsemi APTM120DSK57T3G to view detailed technical specifications.
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