Microsemi
ARF460AG
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT PACKAGE-3
Frequency65MHz
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Microsemi ARF460AG technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 4ns |
| Gain | 13dB |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Max Frequency | 65MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Operating Frequency | 65 MHz |
| Output Power | 150W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Weight | 1.340411oz |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi ARF460AG Datasheet
Download the complete datasheet for Microsemi ARF460AG to view detailed technical specifications.
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