Microsemi ITC1100 technical specifications.
| Collector Base Voltage (VCBO) | 65V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Voltage (VCEO) | 30V |
| Emitter Base Voltage (VEBO) | 3.5V |
| Gain | 10.5dB |
| Max Collector Current | 80A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 3.4kW |
| Mount | Chassis Mount, Screw |
| Packaging | Bulk |
| Power Dissipation | 3.4kW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Transition Frequency | 1.03GHz |
| RoHS | Not CompliantNo |
Download the complete datasheet for Microsemi ITC1100 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
