The JAN2N1485 is a bipolar junction transistor with a collector base voltage rating of 60V and a maximum collector current of 3A. It has a maximum power dissipation of 1.75W and operates within a temperature range of -55°C to 125°C. The device is packaged in a TO-8, 3 PIN package and is available in bulk packaging. It is not radiation hardened and is not RoHS compliant.
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N1485 technical specifications.
General
| Collector Base Voltage (VCBO) | 60V |
| Max Collector Current | 3A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N1485 Datasheet
Download the complete datasheet for Microsemi JAN2N1485 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.