The JAN2N2218 is a bipolar junction transistor from Microsemi with a collector base voltage of 60V and a maximum collector current of 800mA. It has a maximum power dissipation of 800mW and is rated for operation between -55°C and 200°C. The device is packaged in a TO-39, 3 PIN package and is available in bulk. It is not radiation hardened and is not RoHS compliant.
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N2218 technical specifications.
General
| Collector Base Voltage (VCBO) | 60V |
| Max Collector Current | 800mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N2218 Datasheet
Download the complete datasheet for Microsemi JAN2N2218 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.