The JAN2N2218A is a military-grade bipolar junction transistor with a maximum collector current of 800mA and a collector-emitter breakdown voltage of 50V. It operates over a temperature range of -55°C to 200°C and is packaged in a TO-39-3 case for through-hole mounting. This transistor is designed for use in high-reliability applications and meets the requirements of MIL-PRF-19500/251.
PackageTO-39-3
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N2218A technical specifications.
General
| Package/Case | TO-39-3 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 1V |
| Max Collector Current | 800mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/251 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N2218A Datasheet
Download the complete datasheet for Microsemi JAN2N2218A to view detailed technical specifications.
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