The JAN2N2905 is a NPN bipolar junction transistor with a collector base voltage rating of 60V and a maximum collector current of 600mA. It is designed for operation in a wide temperature range of -65°C to 200°C. The transistor has a maximum power dissipation of 600mW and is available in a bulk packaging option. It is not radiation hardened and is not compliant with RoHS regulations.
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N2905 technical specifications.
General
| Collector Base Voltage (VCBO) | 60V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 600mW |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N2905 Datasheet
Download the complete datasheet for Microsemi JAN2N2905 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.