The JAN2N2905AL is a bipolar junction transistor with a collector base voltage of 60V and a maximum collector current of 600mA. It features a TO-5-3 package and is designed for through hole mounting. The transistor has a maximum operating temperature of 200°C and a minimum operating temperature of -65°C. It is not radiation hardened and is not RoHS compliant. The JAN2N2905AL is part of the Military series, meeting the MIL-PRF-19500/290 standard.
PackageTO-5-3
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N2905AL technical specifications.
General
| Package/Case | TO-5-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/290 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N2905AL Datasheet
Download the complete datasheet for Microsemi JAN2N2905AL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.