The JAN2N2919 bipolar junction transistor has a collector base voltage rating of 70V and a maximum collector current of 30mA. It can operate within a temperature range of -65°C to 200°C and dissipate a maximum of 350mW. The device is packaged in a bulk format with a mount type of through hole. It is not radiation hardened and is not RoHS compliant.
MountingThrough Hole
Quick Jump:
Technical Specifications
Microsemi JAN2N2919 technical specifications.
General
| Collector Base Voltage (VCBO) | 70V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N2919 Datasheet
Download the complete datasheet for Microsemi JAN2N2919 to view detailed technical specifications.
No datasheet is available for this part.