The JAN2N2919L is a bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 30mA. It has a maximum power dissipation of 350mW and is packaged in a TO-78-6 package for through-hole mounting. The transistor operates over a temperature range of -65°C to 200°C. It is not radiation hardened and is not RoHS compliant. The JAN2N2919L is part of the Military series, meeting MIL-PRF-19500/355 specifications.
PackageTO-78-6
MountingThrough Hole
Quick Jump:
Technical Specifications
Microsemi JAN2N2919L technical specifications.
General
| Package/Case | TO-78-6 |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Max Collector Current | 30mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/355 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N2919L Datasheet
Download the complete datasheet for Microsemi JAN2N2919L to view detailed technical specifications.
No datasheet is available for this part.