The JAN2N3500 bipolar junction transistor from Microsemi features a collector base voltage of 150V and a maximum collector current of 300mA. It has a maximum power dissipation of 1W and operates within a temperature range of -55°C to 200°C. The device is packaged in a bulk format with a similar to TO-5, 3-pin package type and is intended for use in through-hole mounting applications.
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N3500 technical specifications.
General
| Collector Base Voltage (VCBO) | 150V |
| Max Collector Current | 300mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N3500 Datasheet
Download the complete datasheet for Microsemi JAN2N3500 to view detailed technical specifications.
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