The JAN2N3501L is a bipolar junction transistor with a collector-emitter breakdown voltage of 150V and a maximum collector current of 300mA. It has a maximum power dissipation of 1W and operates over a temperature range of -65°C to 200°C. The transistor is packaged in a TO-5-3 package and is available in bulk quantities. It is not radiation hardened and is not RoHS compliant.
PackageTO-5-3
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N3501L technical specifications.
General
| Package/Case | TO-5-3 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector-emitter Voltage-Max | 400mV |
| Max Collector Current | 300mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/366 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N3501L Datasheet
Download the complete datasheet for Microsemi JAN2N3501L to view detailed technical specifications.
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