The JAN2N3501UB is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 150V and a maximum collector current of 300mA. It has a maximum power dissipation of 500mW and operates over a temperature range of -65°C to 200°C. This transistor is not radiation hardened and is not RoHS compliant. It is part of the Military series, meeting the MIL-PRF-19500/366 standard.
PackageSMD/SMT
MountingSurface Mount
Quick Jump:
Technical Specifications
Microsemi JAN2N3501UB technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector-emitter Voltage-Max | 400mV |
| Max Collector Current | 300mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/366 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N3501UB Datasheet
Download the complete datasheet for Microsemi JAN2N3501UB to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.