The JAN2N3716 is a bipolar junction transistor with a collector base voltage of 100V and a maximum collector current of 10A. It operates within a temperature range of -55°C to 125°C and has a maximum power dissipation of 5W. The device is available in a TO-204AA package with a through-hole mount. It is not radiation hardened and is not RoHS compliant.
MountingThrough Hole
Quick Jump:
Technical Specifications
Microsemi JAN2N3716 technical specifications.
General
| Collector Base Voltage (VCBO) | 100V |
| Max Collector Current | 10A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N3716 Datasheet
Download the complete datasheet for Microsemi JAN2N3716 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.