The JAN2N3735L is a TO-5 3-Pin Bipolar Junction Transistor from Microsemi with a Collector Base Voltage (VCBO) of 75V and Collector Emitter Breakdown Voltage of 40V. It can handle a maximum collector current of 1.5A and has a maximum power dissipation of 1W. The transistor is rated for operation between -65°C and 200°C and is available in bulk packaging.
PackageTO-5-3
MountingThrough Hole
Quick Jump:
Technical Specifications
Microsemi JAN2N3735L technical specifications.
General
| Package/Case | TO-5-3 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 900mV |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/395 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N3735L Datasheet
Download the complete datasheet for Microsemi JAN2N3735L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.