The JAN2N3749 is a bipolar junction transistor from Microsemi with a collector base voltage of 110V and a maximum collector current of 5A. It has a maximum power dissipation of 2W and operates over a temperature range of -65°C to 200°C. The transistor is packaged in a TO-59 case and is mounted via a stud. It is not radiation hardened and is not RoHS compliant.
MountingStud
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Technical Specifications
Microsemi JAN2N3749 technical specifications.
General
| Collector Base Voltage (VCBO) | 110V |
| Max Collector Current | 5A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Stud |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N3749 Datasheet
Download the complete datasheet for Microsemi JAN2N3749 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.