The JAN2N3792 is a bipolar junction transistor with a collector base voltage rating of 80V and a maximum collector current of 10A. It features a TO-3 package and is rated for operation between -65°C and 200°C. The transistor is not radiation hardened and is not RoHS compliant. It is part of the Military series, meeting MIL-PRF-19500/379 specifications.
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N3792 technical specifications.
General
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 2.5V |
| Max Collector Current | 10A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 5W |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/379 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N3792 Datasheet
Download the complete datasheet for Microsemi JAN2N3792 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.