The JAN2N5157 is a TO-3 packaged NPN bipolar junction transistor from Microsemi. It features a collector base voltage of 700V, collector emitter voltage of 500V, and emitter base voltage of 6V. The transistor can handle a maximum collector current of 3.5A and has a maximum power dissipation of 5W. It operates over a temperature range of -55°C to 125°C and is available in bulk packaging.
PackageTO-3
MountingThrough Hole
PolarityNPN
Power5W
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Technical Specifications
Microsemi JAN2N5157 technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Voltage (VCEO) | 500V |
| Emitter Base Voltage (VEBO) | 6V |
| Max Collector Current | 3.5A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JAN2N5157 Datasheet
Download the complete datasheet for Microsemi JAN2N5157 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.