The JAN2N6301 is a TO-66 packaged NPN bipolar junction transistor with a collector-emitter saturation voltage of 2V and collector-emitter voltage of 80V. It operates over a temperature range of -55°C to 200°C and is available in a 2-pin package with tin-lead plating. This transistor is not RoHS compliant. It is suitable for use in high-temperature applications.
PackageTO-66
MountingThrough Hole
PolarityNPN
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Technical Specifications
Microsemi JAN2N6301 technical specifications.
General
| Package/Case | TO-66 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Contact Plating | Tin, Lead |
| Emitter Base Voltage (VEBO) | 5V |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Polarity | NPN |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Microsemi JAN2N6301 Datasheet
Download the complete datasheet for Microsemi JAN2N6301 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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