Microsemi
JAN2N6353
Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 3 Pin, TO-24, 3 PIN
PackageTO-66-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Microsemi JAN2N6353 technical specifications.
General
Package/Case
TO-66-3
Collector Base Voltage (VCBO)
150V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
150V
Collector-emitter Voltage-Max
2.5V
Emitter Base Voltage (VEBO)
12V
Max Collector Current
5A
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Mount
Through Hole
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Radiation Hardening
No
RoHS Compliant
No
Series
Military, MIL-PRF-19500/472
Compliance
RoHS
Not CompliantNo
Datasheet
Microsemi JAN2N6353 Datasheet
Download the complete datasheet for Microsemi JAN2N6353 to view detailed technical specifications.
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