Microsemi
JAN2N6849
Small Signal Field-Effect Transistor, 6.5A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
PackageTO-39
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N6849 technical specifications.
General
Package/Case
TO-39
Contact Plating
Tin, Lead
Continuous Drain Current (ID)
6.5A
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
1
Packaging
Bulk
Rds On Max
320mR
RoHS Compliant
No
Series
Military, MIL-PRF-19500/564
Compliance
RoHS
Not Compliant
Datasheet
Microsemi JAN2N6849 Datasheet
Download the complete datasheet for Microsemi JAN2N6849 to view detailed technical specifications.
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