The JANTX2N2218 is a bipolar junction transistor with a collector base voltage of 60V and a maximum collector current of 800mA. It is designed for operation in temperatures ranging from -55°C to 200°C and has a maximum power dissipation of 800mW. The transistor is packaged in a TO-39 package with three pins and is available in bulk packaging. It is not radiation hardened and is not RoHS compliant.
Microsemi JANTX2N2218 technical specifications.
| Collector Base Voltage (VCBO) | 60V |
| Max Collector Current | 800mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
Download the complete datasheet for Microsemi JANTX2N2218 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.