The JANTX2N2605 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 30mA. It is packaged in a TO-46-3 package and is rated for a maximum power dissipation of 400mW. The transistor is designed for through-hole mounting and has a maximum operating temperature range of -65°C to 200°C. It is not radiation hardened and is not RoHS compliant.
PackageTO-46-3
MountingThrough Hole
PolarityPNP
Power400mW
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Technical Specifications
Microsemi JANTX2N2605 technical specifications.
General
| Package/Case | TO-46-3 |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | 6V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/354 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N2605 Datasheet
Download the complete datasheet for Microsemi JANTX2N2605 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.