Microsemi
JANTX2N2857
NPN RF Transistor, 15V Collector Emitter Breakdown Voltage, 40mA Max Collector Current
The JANTX2N2857 is a hermetically sealed, metal can-4 packaged NPN RF transistor with a collector emitter breakdown voltage of 15V and a maximum collector current of 40mA. It operates within a temperature range of -65°C to 200°C and has a maximum power dissipation of 200mW. The transistor is available in a TO-72-3 package and is not radiation hardened. It is not RoHS compliant and is part of the military series MIL-PRF-19500/343.
PackageTO-72-3
MountingThrough Hole
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Technical Specifications
Microsemi JANTX2N2857 technical specifications.
General
| Package/Case | TO-72-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 15V |
| Gain | 21dB |
| Max Collector Current | 40mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/343 |
| Transition Frequency | 500MHz |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N2857 Datasheet
Download the complete datasheet for Microsemi JANTX2N2857 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.