The JANTX2N3019S is a TO-39-3 package bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. It has a maximum power dissipation of 800mW and is designed for through hole mounting. The device is not radiation hardened and is not RoHS compliant due to the presence of lead. It meets the requirements of the MIL-PRF-19500/391 series and is suitable for use in military applications.
PackageTO-39-3
MountingThrough Hole
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Technical Specifications
Microsemi JANTX2N3019S technical specifications.
General
| Package/Case | TO-39-3 |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Lead Free | Contains Lead |
| Max Collector Current | 1A |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/391 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N3019S Datasheet
Download the complete datasheet for Microsemi JANTX2N3019S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.