The JANTX2N3735L is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 1.5A. It has a maximum power dissipation of 1W and operates over a temperature range of -65°C to 200°C. The transistor is packaged in a TO-5-3 package and is mounted through a hole. It is not radiation hardened and is not RoHS compliant.
PackageTO-5-3
MountingThrough Hole
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Technical Specifications
Microsemi JANTX2N3735L technical specifications.
General
| Package/Case | TO-5-3 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 900mV |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/395 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N3735L Datasheet
Download the complete datasheet for Microsemi JANTX2N3735L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.