The JANTX2N3868 is a PNP bipolar junction transistor with a maximum collector current of 3A and a maximum power dissipation of 1W. It has a maximum operating temperature of 200°C and a minimum operating temperature of -65°C. The transistor is packaged in a TO-5 cylindrical package and is available in bulk packaging. It is not RoHS compliant and contains lead, making it a non-lead-free component.
PackageTO-5
MountingThrough Hole
PolarityPNP
Power1W
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Technical Specifications
Microsemi JANTX2N3868 technical specifications.
General
| Package/Case | TO-5 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 4V |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 3A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/350 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N3868 Datasheet
Download the complete datasheet for Microsemi JANTX2N3868 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.