The JANTX2N4399 is a TO-3, 2 PIN bipolar junction transistor with a maximum collector current of 30A and a maximum operating temperature of 200°C. It has a collector-emitter breakdown voltage of 60V and a maximum power dissipation of 5W. This transistor is designed for use in high-power applications and is packaged in bulk for through-hole mounting.
MountingThrough Hole
Quick Jump:
Technical Specifications
Microsemi JANTX2N4399 technical specifications.
General
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 750mV |
| Max Collector Current | 30A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/433 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N4399 Datasheet
Download the complete datasheet for Microsemi JANTX2N4399 to view detailed technical specifications.
No datasheet is available for this part.