The JANTX2N5151 is a bipolar junction transistor with a collector base voltage of 100V and a maximum collector current of 2A. It can operate in temperatures ranging from -65°C to 200°C and has a maximum power dissipation of 1W. The transistor is packaged in a bulk format and is designed for through hole mounting.
MountingThrough Hole
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Technical Specifications
Microsemi JANTX2N5151 technical specifications.
General
| Collector Base Voltage (VCBO) | 100V |
| Max Collector Current | 2A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N5151 Datasheet
Download the complete datasheet for Microsemi JANTX2N5151 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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