The JANTX2N5665 is a military-grade bipolar junction transistor with a maximum collector current of 5A and collector-emitter breakdown voltage of 300V. It operates over a temperature range of -65°C to 200°C and has a maximum power dissipation of 2.5W. The transistor is packaged in a TO-66-2 case and is available with tin and lead contact plating. Note that this device is not RoHS compliant.
PackageTO-66-2
MountingThrough Hole
Quick Jump:
Technical Specifications
Microsemi JANTX2N5665 technical specifications.
General
| Package/Case | TO-66-2 |
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Tin, Lead |
| Max Collector Current | 5A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/455 |
Compliance
| RoHS | Not Compliant |
Datasheet
Microsemi JANTX2N5665 Datasheet
Download the complete datasheet for Microsemi JANTX2N5665 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.