The JANTX2N5667 is a TO-5 packaged NPN bipolar junction transistor with a maximum collector current of 5A and a maximum collector-emitter breakdown voltage of 300V. It has a maximum operating temperature range of -65°C to 200°C and a maximum power dissipation of 1.2W. The transistor is not radiation hardened and is not RoHS compliant.
PackageTO-5
MountingThrough Hole
PolarityNPN
Power1.2W
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Technical Specifications
Microsemi JANTX2N5667 technical specifications.
General
| Package/Case | TO-5 |
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Tin, Lead |
| Emitter Base Voltage (VEBO) | 6V |
| Max Collector Current | 5A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 1.2W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/455 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N5667 Datasheet
Download the complete datasheet for Microsemi JANTX2N5667 to view detailed technical specifications.
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