The JANTX2N6059 is a TO-3 NPN bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 12A. It has a maximum power dissipation of 150W and operates over a temperature range of -55°C to 175°C. The transistor is available in a through-hole package with a tin-lead contact plating.
PackageTO-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Microsemi JANTX2N6059 technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Contact Plating | Tin, Lead |
| Emitter Base Voltage (VEBO) | 5V |
| Max Collector Current | 12A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Polarity | NPN |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/502 |
Compliance
| RoHS | Not Compliant |
Datasheet
Microsemi JANTX2N6059 Datasheet
Download the complete datasheet for Microsemi JANTX2N6059 to view detailed technical specifications.
No datasheet is available for this part.