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Technical Specifications
Microsemi JANTX2N6299 technical specifications.
General
| Package/Case | TO-66 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 2V |
| Contact Plating | Tin, Lead |
| Emitter Base Voltage (VEBO) | 5V |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 8A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 64W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Bulk |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/540 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N6299 Datasheet
Download the complete datasheet for Microsemi JANTX2N6299 to view detailed technical specifications.
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