Microsemi
JANTXV2N5582
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AB, TO-46, 3 PIN
PackageTO-46-3
MountingThrough Hole
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Technical Specifications
Microsemi JANTXV2N5582 technical specifications.
General
| Package/Case | TO-46-3 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Tin, Lead |
| Max Collector Current | 800mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/423 |
Compliance
| RoHS | Not Compliant |
Datasheet
Microsemi JANTXV2N5582 Datasheet
Download the complete datasheet for Microsemi JANTXV2N5582 to view detailed technical specifications.
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