Microsemi
JANTXV2N6301
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN
PackageTO-66-2
MountingThrough Hole
Quick Jump:
Technical Specifications
Microsemi JANTXV2N6301 technical specifications.
General
| Package/Case | TO-66-2 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 3V |
| Contact Plating | Tin, Lead |
| Max Collector Current | 8A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/539 |
Compliance
| RoHS | Not Compliant |
Datasheet
Microsemi JANTXV2N6301 Datasheet
Download the complete datasheet for Microsemi JANTXV2N6301 to view detailed technical specifications.
No datasheet is available for this part.